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Silicon carbide oxidation nanolithography - An Overview

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Advanced design activities are focusing to the field of specific on-resistance since the major benchmark parameter for the presented technology. Among the most revolutionary developments was using SiC as being a most important compound in a number of its devices. CoolSiC�?Hybrid Discretes undoubtedly are a combination of two proven, best-in-class https://www.facebook.com/permalink.php?story_fbid=pfbid0k16HbR2HLDydNQKktSQiLcDhkrdJrhCofdyAcVwR4GANGNaMcpjvtgbaVMhCRLb5l&id=61562415773754&__cft__[0]=AZV8J_qD86biHfRaXq-NtXSh91o95QYm9wYmIISM55EssZlLzvUx02BE3nRRMXIxgVaosTIYC2GadbizIOyt4afmJKW7rLwqYNR7Py_uwblnUOCjnewnNnWZvFn62BY47SVmxre3amN9HHGEpbid7GDB17nNMjaj_yacmVB8s2QMaA-4awaTtlJ_NemVzBcHtUleDQkvakWD6D-MqEfSfQU8&__tn__=%2CO%2CP-R

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